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| Datasheet | GP1M010A080N |
| File Size | 567.7 KB |
| Total Pages | 5 |
| Manufacturer | Global Power Technologies Group |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | GP1M010A080N |
| Description | MOSFET N-CH 900V 10A TO3PN |
GP1M010A080N - Global Power Technologies Group
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URL Link
www.oemstron.com/datasheet/GP1M010A080N
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Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.05Ohm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2336pF @ 25V FET Feature - Power Dissipation (Max) 312W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PN Package / Case TO-3P-3, SC-65-3 |