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GP1M007A065CG Datasheet

GP1M007A065CG Cover
DatasheetGP1M007A065CG
File Size531.25 KB
Total Pages6
ManufacturerGlobal Power Technologies Group
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts GP1M007A065CG
Description MOSFET N-CH 650V 6.5A DPAK

GP1M007A065CG - Global Power Technologies Group

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GP1M007A065CG GP1M007A065CG Global Power Technologies Group MOSFET N-CH 650V 6.5A DPAK 371

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URL Link

GP1M007A065CG

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 3.25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1201pF @ 25V

FET Feature

-

Power Dissipation (Max)

120W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63