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GP1M004A090H Datasheet

GP1M004A090H Cover
DatasheetGP1M004A090H
File Size415.42 KB
Total Pages7
ManufacturerGlobal Power Technologies Group
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts GP1M004A090H, GP1M004A090FH
Description MOSFET N-CH 900V 4A TO220, MOSFET N-CH 900V 4A TO220F

GP1M004A090H - Global Power Technologies Group

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GP1M004A090H GP1M004A090H Global Power Technologies Group MOSFET N-CH 900V 4A TO220 268

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GP1M004A090FH GP1M004A090FH Global Power Technologies Group MOSFET N-CH 900V 4A TO220F 263

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URL Link

GP1M004A090H

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

955pF @ 25V

FET Feature

-

Power Dissipation (Max)

123W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

GP1M004A090FH

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

955pF @ 25V

FET Feature

-

Power Dissipation (Max)

38.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack