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GB2X50MPS12-227 Datasheet

GB2X50MPS12-227 Cover
DatasheetGB2X50MPS12-227
File Size806.46 KB
Total Pages7
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts GB2X50MPS12-227
Description SIC DIODE 1200V 100A SOT-227

GB2X50MPS12-227 - GeneSiC Semiconductor

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GB2X50MPS12-227 GB2X50MPS12-227 GeneSiC Semiconductor SIC DIODE 1200V 100A SOT-227 282

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URL Link

GB2X50MPS12-227

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

2 Independent

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io) (per Diode)

93A (DC)

Voltage - Forward (Vf) (Max) @ If

1.8V @ 50A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

40µA @ 1200V

Operating Temperature - Junction

-55°C ~ 175°C

Mounting Type

Chassis Mount

Package / Case

SOT-227-4, miniBLOC

Supplier Device Package

SOT-227