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| Datasheet | GB02SHT06-46 |
| File Size | 371.73 KB |
| Total Pages | 4 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | GB02SHT06-46 |
| Description | DIODE SCHOTTKY 600V 4A |
GB02SHT06-46 - GeneSiC Semiconductor
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GB02SHT06-46 | GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | 471 More on Order |
URL Link
www.oemstron.com/datasheet/GB02SHT06-46
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Manufacturer GeneSiC Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 4A (DC) Voltage - Forward (Vf) (Max) @ If 1.6V @ 1A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 5µA @ 600V Capacitance @ Vr, F 76pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-206AB, TO-46-3 Metal Can Supplier Device Package TO-46 Operating Temperature - Junction -55°C ~ 225°C |