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| Datasheet | GAP3SLT33-214 |
| File Size | 401.67 KB |
| Total Pages | 6 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | GAP3SLT33-214 |
| Description | DIODE SCHOTTKY 3.3KV 300MA DO214 |
GAP3SLT33-214 - GeneSiC Semiconductor
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GAP3SLT33-214 | GeneSiC Semiconductor | DIODE SCHOTTKY 3.3KV 300MA DO214 | 137 More on Order |
URL Link
www.oemstron.com/datasheet/GAP3SLT33-214
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Manufacturer GeneSiC Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 3300V Current - Average Rectified (Io) 300mA (DC) Voltage - Forward (Vf) (Max) @ If 2.2V @ 300mA Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 10µA @ 3300V Capacitance @ Vr, F 42pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case DO-214AA, SMB Supplier Device Package DO-214AA Operating Temperature - Junction -55°C ~ 175°C |