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GA10SICP12-263 Datasheet

GA10SICP12-263 Cover
DatasheetGA10SICP12-263
File Size1,461.01 KB
Total Pages13
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts GA10SICP12-263
Description TRANS SJT 1200V 25A TO263-7

GA10SICP12-263 - GeneSiC Semiconductor

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URL Link

GA10SICP12-263

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

FET Type

-

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

100mOhm @ 10A

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

1403pF @ 800V

FET Feature

-

Power Dissipation (Max)

170W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK (7-Lead)

Package / Case

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA