Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | GA08JT17-247 |
| File Size | 1,213.29 KB |
| Total Pages | 11 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | GA08JT17-247 |
| Description | TRANS SJT 1700V 8A TO-247AB |
GA08JT17-247 - GeneSiC Semiconductor
The Products You May Be Interested In
 |
GA08JT17-247 | GeneSiC Semiconductor | TRANS SJT 1700V 8A TO-247AB | 1218 More on Order |
URL Link
www.oemstron.com/datasheet/GA08JT17-247
|
Manufacturer GeneSiC Semiconductor Series - FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1700V Current - Continuous Drain (Id) @ 25°C 8A (Tc) (90°C) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 250mOhm @ 8A Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 48W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AB Package / Case TO-247-3 |