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FQD3N60CTM-WS Datasheet

FQD3N60CTM-WS Cover
DatasheetFQD3N60CTM-WS
File Size954.92 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FQD3N60CTM-WS
Description MOSFET N-CH 600V 2.4A DPAK

FQD3N60CTM-WS - ON Semiconductor

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FQD3N60CTM-WS FQD3N60CTM-WS ON Semiconductor MOSFET N-CH 600V 2.4A DPAK 354

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URL Link

FQD3N60CTM-WS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.4Ohm @ 1.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

565pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63