Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

FQB10N20CTM Datasheet

FQB10N20CTM Cover
DatasheetFQB10N20CTM
File Size608.82 KB
Total Pages9
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FQB10N20CTM
Description MOSFET N-CH 200V 9.5A D2PAK

FQB10N20CTM - ON Semiconductor

FQB10N20CTM Datasheet Page 1
FQB10N20CTM Datasheet Page 2
FQB10N20CTM Datasheet Page 3
FQB10N20CTM Datasheet Page 4
FQB10N20CTM Datasheet Page 5
FQB10N20CTM Datasheet Page 6
FQB10N20CTM Datasheet Page 7
FQB10N20CTM Datasheet Page 8
FQB10N20CTM Datasheet Page 9

The Products You May Be Interested In

FQB10N20CTM FQB10N20CTM ON Semiconductor MOSFET N-CH 200V 9.5A D2PAK 432

More on Order

URL Link

FQB10N20CTM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 4.75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

510pF @ 25V

FET Feature

-

Power Dissipation (Max)

72W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB