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Datasheet | FQAF8N80 |
File Size | 690.58 KB |
Total Pages | 8 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | FQAF8N80 |
Description | MOSFET N-CH 800V 5.9A TO-3PF |
FQAF8N80 - ON Semiconductor
![FQAF8N80 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/fqaf8n80-0001.jpg)
![FQAF8N80 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/fqaf8n80-0002.jpg)
![FQAF8N80 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/fqaf8n80-0003.jpg)
![FQAF8N80 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/fqaf8n80-0004.jpg)
![FQAF8N80 Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/fqaf8n80-0005.jpg)
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![FQAF8N80 Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/fqaf8n80-0007.jpg)
![FQAF8N80 Datasheet Page 8](http://media.oemstron.com/oemstron/datasheet/sm/fqaf8n80-0008.jpg)
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FQAF8N80 | ON Semiconductor | MOSFET N-CH 800V 5.9A TO-3PF | 492 More on Order |
URL Link
www.oemstron.com/datasheet/FQAF8N80
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 5.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.95A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 25V FET Feature - Power Dissipation (Max) 107W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PF Package / Case TO-3P-3 Full Pack |