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FQA33N10 Datasheet

FQA33N10 Cover
DatasheetFQA33N10
File Size566.61 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FQA33N10
Description MOSFET N-CH 100V 36A TO-3P

FQA33N10 - ON Semiconductor

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URL Link

FQA33N10

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

52mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 25V

FET Feature

-

Power Dissipation (Max)

163W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3