Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | FP150R07N3E4B11BOSA1 |
| File Size | 846.27 KB |
| Total Pages | 12 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FP150R07N3E4B11BOSA1 |
| Description | IGBT MODULE VCES 650V 150A |
FP150R07N3E4B11BOSA1 - Infineon Technologies
The Products You May Be Interested In
 |
FP150R07N3E4B11BOSA1 | Infineon Technologies | IGBT MODULE VCES 650V 150A | 106 More on Order |
URL Link
www.oemstron.com/datasheet/FP150R07N3E4B11BOSA1
|
Manufacturer Infineon Technologies Series - IGBT Type Trench Field Stop Configuration Three Phase Inverter Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 150A Power - Max 430W Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 150A Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 9.3nF @ 25V Input Standard NTC Thermistor Yes Operating Temperature -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |