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FJV3110RMTF Datasheet

FJV3110RMTF Cover
DatasheetFJV3110RMTF
File Size279.95 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FJV3110RMTF
Description TRANS PREBIAS NPN 200MW SOT23-3

FJV3110RMTF - ON Semiconductor

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FJV3110RMTF FJV3110RMTF ON Semiconductor TRANS PREBIAS NPN 200MW SOT23-3 14120

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URL Link

FJV3110RMTF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

10 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3 (TO-236)