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FJNS3211RBU Datasheet

FJNS3211RBU Cover
DatasheetFJNS3211RBU
File Size26.37 KB
Total Pages3
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts FJNS3211RBU, FJNS3211RTA
Description TRANS PREBIAS NPN 300MW TO92S, TRANS PREBIAS NPN 300MW TO92S

FJNS3211RBU - ON Semiconductor

FJNS3211RBU Datasheet Page 1
FJNS3211RBU Datasheet Page 2
FJNS3211RBU Datasheet Page 3

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FJNS3211RBU FJNS3211RBU ON Semiconductor TRANS PREBIAS NPN 300MW TO92S 469

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FJNS3211RTA FJNS3211RTA ON Semiconductor TRANS PREBIAS NPN 300MW TO92S 120

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URL Link

FJNS3211RBU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

300mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Short Body

Supplier Device Package

TO-92S

FJNS3211RTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

300mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Short Body

Supplier Device Package

TO-92S