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FJN3311RBU Datasheet

FJN3311RBU Cover
DatasheetFJN3311RBU
File Size26.45 KB
Total Pages3
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts FJN3311RBU, FJN3311RTA
Description TRANS PREBIAS NPN 300MW TO92-3, TRANS PREBIAS NPN 300MW TO92-3

FJN3311RBU - ON Semiconductor

FJN3311RBU Datasheet Page 1
FJN3311RBU Datasheet Page 2
FJN3311RBU Datasheet Page 3

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FJN3311RBU FJN3311RBU ON Semiconductor TRANS PREBIAS NPN 300MW TO92-3 245

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FJN3311RTA FJN3311RTA ON Semiconductor TRANS PREBIAS NPN 300MW TO92-3 427

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URL Link

FJN3311RBU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

300mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

FJN3311RTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

300mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3