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| Datasheet | FGB40N6S2 |
| File Size | 176.34 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | FGB40N6S2, FGB40N6S2T, FGP40N6S2, FGH40N6S2 |
| Description | IGBT 600V 75A 290W TO263AB, IGBT 600V 75A 290W TO263AB, IGBT 600V 75A 290W TO220AB, IGBT 600V 75A 290W TO247 |
FGB40N6S2 - ON Semiconductor
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 75A Current - Collector Pulsed (Icm) 180A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A Power - Max 290W Switching Energy 115µJ (on), 195µJ (off) Input Type Standard Gate Charge 35nC Td (on/off) @ 25°C 8ns/35ns Test Condition 390V, 20A, 3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB |
Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 75A Current - Collector Pulsed (Icm) 180A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A Power - Max 290W Switching Energy 115µJ (on), 195µJ (off) Input Type Standard Gate Charge 35nC Td (on/off) @ 25°C 8ns/35ns Test Condition 390V, 20A, 3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB |
Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 75A Current - Collector Pulsed (Icm) 180A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A Power - Max 290W Switching Energy 115µJ (on), 195µJ (off) Input Type Standard Gate Charge 35nC Td (on/off) @ 25°C 8ns/35ns Test Condition 390V, 20A, 3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 75A Current - Collector Pulsed (Icm) 180A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A Power - Max 290W Switching Energy 115µJ (on), 195µJ (off) Input Type Standard Gate Charge 35nC Td (on/off) @ 25°C 8ns/35ns Test Condition 390V, 20A, 3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |