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| Datasheet | FGA50N100BNTDTU |
| File Size | 348.24 KB |
| Total Pages | 9 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FGA50N100BNTDTU |
| Description | IGBT 1000V 50A 156W TO3P |
FGA50N100BNTDTU - ON Semiconductor
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URL Link
www.oemstron.com/datasheet/FGA50N100BNTDTU
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Manufacturer ON Semiconductor Series - IGBT Type NPT and Trench Voltage - Collector Emitter Breakdown (Max) 1000V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 100A Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A Power - Max 156W Switching Energy - Input Type Standard Gate Charge 275nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 1.5µs Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |