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| Datasheet | FGA30N120FTDTU |
| File Size | 528.68 KB |
| Total Pages | 11 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FGA30N120FTDTU |
| Description | IGBT 1200V 60A 339W TO3P |
FGA30N120FTDTU - ON Semiconductor
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FGA30N120FTDTU | ON Semiconductor | IGBT 1200V 60A 339W TO3P | 521 More on Order |
URL Link
www.oemstron.com/datasheet/FGA30N120FTDTU
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Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A Power - Max 339W Switching Energy - Input Type Standard Gate Charge 208nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 730ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3PN |