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| Datasheet | FF650R17IE4DB2BOSA1 |
| File Size | 1,746.93 KB |
| Total Pages | 10 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FF650R17IE4DB2BOSA1 |
| Description | IGBT MODULE VCES 1700V 650A |
FF650R17IE4DB2BOSA1 - Infineon Technologies
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FF650R17IE4DB2BOSA1 | Infineon Technologies | IGBT MODULE VCES 1700V 650A | 285 More on Order |
URL Link
www.oemstron.com/datasheet/FF650R17IE4DB2BOSA1
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Manufacturer Infineon Technologies Series - IGBT Type - Configuration 2 Independent Voltage - Collector Emitter Breakdown (Max) 1700V Current - Collector (Ic) (Max) - Power - Max 4150W Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 650A Current - Collector Cutoff (Max) 5mA Input Capacitance (Cies) @ Vce 54nF @ 25V Input Standard NTC Thermistor Yes Operating Temperature -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |