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| Datasheet | FF200R12KT3EHOSA1 |
| File Size | 429.24 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FF200R12KT3EHOSA1 |
| Description | IGBT MODULE VCES 1200V 200A |
FF200R12KT3EHOSA1 - Infineon Technologies
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FF200R12KT3EHOSA1 | Infineon Technologies | IGBT MODULE VCES 1200V 200A | 429 More on Order |
URL Link
www.oemstron.com/datasheet/FF200R12KT3EHOSA1
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Manufacturer Infineon Technologies Series - IGBT Type - Configuration 2 Independent Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) - Power - Max 1050W Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A Current - Collector Cutoff (Max) 5mA Input Capacitance (Cies) @ Vce 14nF @ 25V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 125°C Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |