Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

FDPF7N60NZT Datasheet

FDPF7N60NZT Cover
DatasheetFDPF7N60NZT
File Size728.2 KB
Total Pages11
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts FDPF7N60NZT, FDPF7N60NZ, FDP7N60NZ
Description MOSFET N-CH 600V 6.5A TO-220F, MOSFET N-CH 600V 6.5A TO-220F, MOSFET N-CH 600V 6.5A TO-220

FDPF7N60NZT - ON Semiconductor

FDPF7N60NZT Datasheet Page 1
FDPF7N60NZT Datasheet Page 2
FDPF7N60NZT Datasheet Page 3
FDPF7N60NZT Datasheet Page 4
FDPF7N60NZT Datasheet Page 5
FDPF7N60NZT Datasheet Page 6
FDPF7N60NZT Datasheet Page 7
FDPF7N60NZT Datasheet Page 8
FDPF7N60NZT Datasheet Page 9
FDPF7N60NZT Datasheet Page 10
FDPF7N60NZT Datasheet Page 11

The Products You May Be Interested In

FDPF7N60NZT FDPF7N60NZT ON Semiconductor MOSFET N-CH 600V 6.5A TO-220F 257

More on Order

FDPF7N60NZ FDPF7N60NZ ON Semiconductor MOSFET N-CH 600V 6.5A TO-220F 1190

More on Order

FDP7N60NZ FDP7N60NZ ON Semiconductor MOSFET N-CH 600V 6.5A TO-220 1899

More on Order

URL Link

FDPF7N60NZT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET-II™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.25Ohm @ 3.25A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

730pF @ 25V

FET Feature

-

Power Dissipation (Max)

33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

FDPF7N60NZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET-II™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.25Ohm @ 3.25A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

730pF @ 25V

FET Feature

-

Power Dissipation (Max)

33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

FDP7N60NZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET-II™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.25Ohm @ 3.25A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

730pF @ 25V

FET Feature

-

Power Dissipation (Max)

147W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3