Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

FDP032N08-F102 Datasheet

FDP032N08-F102 Cover
DatasheetFDP032N08-F102
File Size937.93 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts FDP032N08-F102, FDP032N08
Description MOSFET N-CHANNEL 75V 120A TO220, MOSFET N-CH 75V 120A TO-220

FDP032N08-F102 - ON Semiconductor

FDP032N08-F102 Datasheet Page 1
FDP032N08-F102 Datasheet Page 2
FDP032N08-F102 Datasheet Page 3
FDP032N08-F102 Datasheet Page 4
FDP032N08-F102 Datasheet Page 5
FDP032N08-F102 Datasheet Page 6
FDP032N08-F102 Datasheet Page 7
FDP032N08-F102 Datasheet Page 8
FDP032N08-F102 Datasheet Page 9
FDP032N08-F102 Datasheet Page 10

The Products You May Be Interested In

FDP032N08-F102 FDP032N08-F102 ON Semiconductor MOSFET N-CHANNEL 75V 120A TO220 413

More on Order

FDP032N08 FDP032N08 ON Semiconductor MOSFET N-CH 75V 120A TO-220 7319

More on Order

URL Link

FDP032N08-F102

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.2mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15160pF @ 25V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

FDP032N08

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.2mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15160pF @ 25V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3