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FDM15-06KC5 Datasheet

FDM15-06KC5 Cover
DatasheetFDM15-06KC5
File Size76.83 KB
Total Pages3
ManufacturerIXYS
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts FDM15-06KC5, FMD15-06KC5
Description MOSFET N-CH 600V 15A I4-PAC-5, MOSFET N-CH 600V 15A I4-PAC-5

FDM15-06KC5 - IXYS

FDM15-06KC5 Datasheet Page 1
FDM15-06KC5 Datasheet Page 2
FDM15-06KC5 Datasheet Page 3

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URL Link

Manufacturer

IXYS

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

165mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

3.5V @ 790µA

Gate Charge (Qg) (Max) @ Vgs

52nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 100V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS i4-PAC™

Package / Case

ISOPLUSi5-Pak™

Manufacturer

IXYS

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

165mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

3.5V @ 790µA

Gate Charge (Qg) (Max) @ Vgs

52nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 100V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS i4-PAC™

Package / Case

ISOPLUSi5-Pak™