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| Datasheet | FDG312P |
| File Size | 200.37 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FDG312P |
| Description | MOSFET P-CH 20V 1.2A SC70-6 |
FDG312P - ON Semiconductor
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FDG312P | ON Semiconductor | MOSFET P-CH 20V 1.2A SC70-6 | 390 More on Order |
URL Link
www.oemstron.com/datasheet/FDG312P
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Manufacturer ON Semiconductor Series PowerTrench® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 180mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 330pF @ 10V FET Feature - Power Dissipation (Max) 750mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-88 (SC-70-6) Package / Case 6-TSSOP, SC-88, SOT-363 |