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| Datasheet | FDC5612_F095 |
| File Size | 177.45 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | FDC5612_F095, FDC5612 |
| Description | MOSFET N-CH 60V 4.3A 6-SSOT, MOSFET N-CH 60V 4.3A SSOT-6 |
FDC5612_F095 - ON Semiconductor
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Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 55mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT™-6 Package / Case SOT-23-6 Thin, TSOT-23-6 |
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 55mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT™-6 Package / Case SOT-23-6 Thin, TSOT-23-6 |