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| Datasheet | FDC021N30 |
| File Size | 505.61 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FDC021N30 |
| Description | PT8 N 30V/20V, MOSFET |
FDC021N30 - ON Semiconductor
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FDC021N30 | ON Semiconductor | PT8 N 30V/20V, MOSFET | 272 More on Order |
URL Link
www.oemstron.com/datasheet/FDC021N30
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Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 26mOhm @ 6.1A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 710pF @ 15V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT™-6 Package / Case SOT-23-6 Thin, TSOT-23-6 |