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FDB6030BL Datasheet

FDB6030BL Cover
DatasheetFDB6030BL
File Size375.2 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts FDB6030BL, FDP6030BL
Description MOSFET N-CH 30V 40A TO-263AB, MOSFET N-CH 30V 40A TO-220

FDB6030BL - ON Semiconductor

FDB6030BL Datasheet Page 1
FDB6030BL Datasheet Page 2
FDB6030BL Datasheet Page 3
FDB6030BL Datasheet Page 4
FDB6030BL Datasheet Page 5

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URL Link

FDB6030BL

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1160pF @ 15V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

-65°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

R-6

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDP6030BL

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1160pF @ 15V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

-65°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3