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| Datasheet | FDB4020P |
| File Size | 78.73 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | FDB4020P, FDP4020P |
| Description | MOSFET P-CH 20V 16A TO-263AB, MOSFET P-CH 20V 16A TO-220AB |
FDB4020P - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 16A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 80mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 665pF @ 10V FET Feature - Power Dissipation (Max) 37.5W (Tc) Operating Temperature -65°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263AB Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 16A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 80mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 665pF @ 10V FET Feature - Power Dissipation (Max) 37.5W (Tc) Operating Temperature -65°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |