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| Datasheet | FDB3860 |
| File Size | 297.57 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FDB3860 |
| Description | MOSFET N-CH 100V 6.4A D2PAK |
FDB3860 - ON Semiconductor
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FDB3860 | ON Semiconductor | MOSFET N-CH 100V 6.4A D2PAK | 185 More on Order |
URL Link
www.oemstron.com/datasheet/FDB3860
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Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 6.4A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 37mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1740pF @ 50V FET Feature - Power Dissipation (Max) 3.1W (Ta), 71W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263AB Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |