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FCP850N80Z Datasheet

FCP850N80Z Cover
DatasheetFCP850N80Z
File Size663.28 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FCP850N80Z
Description MOSFET N-CH 800V 8A

FCP850N80Z - ON Semiconductor

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FCP850N80Z FCP850N80Z ON Semiconductor MOSFET N-CH 800V 8A 422

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URL Link

FCP850N80Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET® II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

850mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

4.5V @ 600µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1315pF @ 100V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3