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| Datasheet | FCA16N60N |
| File Size | 1,514.44 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FCA16N60N |
| Description | MOSFET N-CH 600V TO-3PN |
FCA16N60N - ON Semiconductor
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URL Link
www.oemstron.com/datasheet/FCA16N60N
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Manufacturer ON Semiconductor Series SupreMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 199mOhm @ 8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 52.3nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2170pF @ 100V FET Feature - Power Dissipation (Max) 134.4W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PN Package / Case TO-3P-3, SC-65-3 |