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EPC8004 Datasheet

EPC8004 Cover
DatasheetEPC8004
File Size1,390.3 KB
Total Pages7
ManufacturerEPC
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts EPC8004
Description GANFET TRANS 40V 2.7A BUMPED DIE

EPC8004 - EPC

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EPC8004 EPC8004 EPC GANFET TRANS 40V 2.7A BUMPED DIE 254

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URL Link

EPC8004

EPC

Manufacturer

EPC

Series

eGaN®

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

2.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

110mOhm @ 500mA, 5V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.45nC @ 5V

Vgs (Max)

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds

52pF @ 20V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die