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| Datasheet | EPC2111ENGRT |
| File Size | 2,022.89 KB |
| Total Pages | 9 |
| Manufacturer | EPC |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | EPC2111ENGRT, EPC2111 |
| Description | GAN TRANS ASYMMETRICAL HALF BRID, GAN TRANS ASYMMETRICAL HALF BRID |
EPC2111ENGRT - EPC
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Manufacturer EPC Series - FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 16A (Ta) Rds On (Max) @ Id, Vgs 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V Vgs(th) (Max) @ Id 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 5V, 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 230pF @ 15V, 590pF @ 15V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer EPC Series - FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 16A (Ta) Rds On (Max) @ Id, Vgs 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V Vgs(th) (Max) @ Id 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 5V, 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 230pF @ 15V, 590pF @ 15V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |