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| Datasheet | EPC2100ENG |
| File Size | 2,114.1 KB |
| Total Pages | 9 |
| Manufacturer | EPC |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | EPC2100ENG, EPC2100ENGRT |
| Description | GAN TRANS 2N-CH 30V BUMPED DIE, GANFET 2 N-CH 30V 9.5A/38A DIE |
EPC2100ENG - EPC
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EPC2100ENG | EPC | GAN TRANS 2N-CH 30V BUMPED DIE | 139 More on Order |
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EPC2100ENGRT | EPC | GANFET 2 N-CH 30V 9.5A/38A DIE | 4487 More on Order |
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Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V Vgs(th) (Max) @ Id 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds 475pF @ 15V, 1960pF @ 15V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V Vgs(th) (Max) @ Id 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds 475pF @ 15V, 1960pF @ 15V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |