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EPC2021ENGR Datasheet

EPC2021ENGR Cover
DatasheetEPC2021ENGR
File Size1,212.07 KB
Total Pages6
ManufacturerEPC
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts EPC2021ENGR, EPC2021
Description TRANS GAN 80V 60A BUMPED DIE, GANFET TRANS 80V 90A BUMPED DIE

EPC2021ENGR - EPC

EPC2021ENGR Datasheet Page 1
EPC2021ENGR Datasheet Page 2
EPC2021ENGR Datasheet Page 3
EPC2021ENGR Datasheet Page 4
EPC2021ENGR Datasheet Page 5
EPC2021ENGR Datasheet Page 6

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URL Link

Manufacturer

EPC

Series

eGaN®

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

60A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 29A, 5V

Vgs(th) (Max) @ Id

2.5V @ 14mA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 5V

Vgs (Max)

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 40V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die

EPC2021

EPC

Manufacturer

EPC

Series

eGaN®

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

90A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 29A, 5V

Vgs(th) (Max) @ Id

2.5V @ 14mA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 5V

Vgs (Max)

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds

1650pF @ 40V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die