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| Datasheet | EPC2019 |
| File Size | 1,212.59 KB |
| Total Pages | 6 |
| Manufacturer | EPC |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | EPC2019 |
| Description | GAN TRANS 200V 8.5A BUMPED DIE |
EPC2019 - EPC
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EPC2019 | EPC | GAN TRANS 200V 8.5A BUMPED DIE | 11709 More on Order |
URL Link
www.oemstron.com/datasheet/EPC2019
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Manufacturer EPC Series eGaN® FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 50mOhm @ 7A, 5V Vgs(th) (Max) @ Id 2.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V Vgs (Max) +6V, -4V Input Capacitance (Ciss) (Max) @ Vds 270pF @ 100V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Package / Case Die |