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EPC2018 Datasheet

EPC2018 Cover
DatasheetEPC2018
File Size1,141.07 KB
Total Pages6
ManufacturerEPC
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts EPC2018
Description GANFET TRANS 150V 12A BUMPED DIE

EPC2018 - EPC

EPC2018 Datasheet Page 1
EPC2018 Datasheet Page 2
EPC2018 Datasheet Page 3
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EPC2018 Datasheet Page 5
EPC2018 Datasheet Page 6

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URL Link

EPC2018

EPC

Manufacturer

EPC

Series

eGaN®

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

25mOhm @ 6A, 5V

Vgs(th) (Max) @ Id

2.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 5V

Vgs (Max)

+6V, -5V

Input Capacitance (Ciss) (Max) @ Vds

540pF @ 100V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 125°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die