Semiconductors
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| Datasheet | DMT3009LFVW-13 |
| File Size | 520.02 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMT3009LFVW-13, DMT3009LFVW-7 |
| Description | MOSFET BVDSS: 25V 30V POWERDI333, MOSFET BVDSS: 25V 30V POWERDI333 |
DMT3009LFVW-13 - Diodes Incorporated
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 3.8V, 10V Rds On (Max) @ Id, Vgs 11mOhm @ 14.4A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 823pF @ 15V FET Feature - Power Dissipation (Max) 2.3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount, Wettable Flank Supplier Device Package PowerDI3333-8 (Type UX) Package / Case 8-PowerVDFN |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 3.8V, 10V Rds On (Max) @ Id, Vgs 11mOhm @ 14.4A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 823pF @ 15V FET Feature - Power Dissipation (Max) 2.3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount, Wettable Flank Supplier Device Package PowerDI3333-8 (Type UX) Package / Case 8-PowerVDFN |