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| Datasheet | DMP2035UVTQ-13 |
| File Size | 479.18 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMP2035UVTQ-13, DMP2035UVTQ-7 |
| Description | MOSFET BVDSS: 8V 24V TSOT26, MOSFET P-CH 20V 7.2A TSOT26 |
DMP2035UVTQ-13 - Diodes Incorporated
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Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 35mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23.1nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSOT-26 Package / Case SOT-23-6 Thin, TSOT-23-6 |
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 35mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23.1nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSOT-26 Package / Case SOT-23-6 Thin, TSOT-23-6 |