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| Datasheet | DMP10H4D2S-13 |
| File Size | 533.27 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMP10H4D2S-13, DMP10H4D2S-7 |
| Description | MOSFET P-CH 100V 0.27A SOT23, MOSFET P-CH 100V 0.27A SOT23 |
DMP10H4D2S-13 - Diodes Incorporated
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Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 4.2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 87pF @ 25V FET Feature - Power Dissipation (Max) 380mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 4.2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 87pF @ 25V FET Feature - Power Dissipation (Max) 380mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |