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DMN61D8LQ-7 Datasheet

DMN61D8LQ-7 Cover
DatasheetDMN61D8LQ-7
File Size505.47 KB
Total Pages7
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts DMN61D8LQ-7, DMN61D8LQ-13
Description MOSFET N-CH 60V SOT23, MOSFET N-CH 60V SOT23

DMN61D8LQ-7 - Diodes Incorporated

DMN61D8LQ-7 Datasheet Page 1
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DMN61D8LQ-13 DMN61D8LQ-13 Diodes Incorporated MOSFET N-CH 60V SOT23 272

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URL Link

DMN61D8LQ-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

470mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

3V, 5V

Rds On (Max) @ Id, Vgs

1.8Ohm @ 150mA, 5V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

0.74nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

12.9pF @ 12V

FET Feature

-

Power Dissipation (Max)

390mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

DMN61D8LQ-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

470mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

3V, 5V

Rds On (Max) @ Id, Vgs

1.8Ohm @ 150mA, 5V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

0.74nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

12.9pF @ 12V

FET Feature

-

Power Dissipation (Max)

390mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3