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| Datasheet | DMN3110LCP3-7 |
| File Size | 578.09 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMN3110LCP3-7 |
| Description | MOSFET N-CH 30V 3.2A X2DFN1006-3 |
DMN3110LCP3-7 - Diodes Incorporated
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URL Link
www.oemstron.com/datasheet/DMN3110LCP3-7
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 8V Rds On (Max) @ Id, Vgs 69mOhm @ 500mA, 8V Vgs(th) (Max) @ Id 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.52nC @ 4.5V Vgs (Max) 12V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 15V FET Feature - Power Dissipation (Max) 1.38W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package X2-DFN1006-3 Package / Case 3-XFDFN |