Semiconductors
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| Datasheet | DMN2026UVT-7 |
| File Size | 482.56 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMN2026UVT-7, DMN2026UVT-13 |
| Description | MOSFET N-CH 20V 6.2A TSOT-26, MOSFET N-CH 20V 6.2A TSOT-26 |
DMN2026UVT-7 - Diodes Incorporated
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 24mOhm @ 6.2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.4nC @ 8V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 887pF @ 10V FET Feature - Power Dissipation (Max) 1.15W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSOT-26 Package / Case SOT-23-6 Thin, TSOT-23-6 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 24mOhm @ 6.2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.4nC @ 8V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 887pF @ 10V FET Feature - Power Dissipation (Max) 1.15W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSOT-26 Package / Case SOT-23-6 Thin, TSOT-23-6 |