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| Datasheet | DMN2009LSS-13 |
| File Size | 232.39 KB |
| Total Pages | 5 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMN2009LSS-13 |
| Description | MOSFET N-CH 20V 12A 8-SOIC |
DMN2009LSS-13 - Diodes Incorporated
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DMN2009LSS-13 | Diodes Incorporated | MOSFET N-CH 20V 12A 8-SOIC | 288 More on Order |
URL Link
www.oemstron.com/datasheet/DMN2009LSS-13
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 12A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 8mOhm @ 12A, 10V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 58.3nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2555pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width) |