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DMN2005UFG-13 Datasheet

DMN2005UFG-13 Cover
DatasheetDMN2005UFG-13
File Size512.58 KB
Total Pages7
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts DMN2005UFG-13, DMN2005UFG-7
Description MOSFET N-CH 20V 18.1A POWERDI-8, MOSFET N-CH 20V 18.1A POWERDI-8

DMN2005UFG-13 - Diodes Incorporated

DMN2005UFG-13 Datasheet Page 1
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DMN2005UFG-13 DMN2005UFG-13 Diodes Incorporated MOSFET N-CH 20V 18.1A POWERDI-8 478

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DMN2005UFG-7 DMN2005UFG-7 Diodes Incorporated MOSFET N-CH 20V 18.1A POWERDI-8 5165

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URL Link

DMN2005UFG-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

18.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

4.6mOhm @ 13.5A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

164nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

6495pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.05W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

DMN2005UFG-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

18.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

4.6mOhm @ 13.5A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

164nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

6495pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.05W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN