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| Datasheet | DMG6601LVT-7 |
| File Size | 382.59 KB |
| Total Pages | 9 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMG6601LVT-7 |
| Description | MOSFET N/P-CH 30V 26TSOT |
DMG6601LVT-7 - Diodes Incorporated
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DMG6601LVT-7 | Diodes Incorporated | MOSFET N/P-CH 30V 26TSOT | 209354 More on Order |
URL Link
www.oemstron.com/datasheet/DMG6601LVT-7
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Manufacturer Diodes Incorporated Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.8A, 2.5A Rds On (Max) @ Id, Vgs 55mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 422pF @ 15V Power - Max 850mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package TSOT-26 |