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| Datasheet | DMG4800LK3-13 |
| File Size | 163.13 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMG4800LK3-13 |
| Description | MOSFET N-CH 30V 10A TO252 |
DMG4800LK3-13 - Diodes Incorporated
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URL Link
www.oemstron.com/datasheet/DMG4800LK3-13
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 17mOhm @ 9A, 10V Vgs(th) (Max) @ Id 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 5V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 798pF @ 10V FET Feature - Power Dissipation (Max) 1.71W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |