Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

DLN10C-BT Datasheet

DLN10C-BT Cover
DatasheetDLN10C-BT
File Size58.73 KB
Total Pages2
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts DLN10C-BT, DLN10C-AT1
Description DIODE GEN PURP 200V 1A AXIAL, DIODE GEN PURP 200V 1A AXIAL

DLN10C-BT - ON Semiconductor

DLN10C-BT Datasheet Page 1
DLN10C-BT Datasheet Page 2

The Products You May Be Interested In

DLN10C-BT DLN10C-BT ON Semiconductor DIODE GEN PURP 200V 1A AXIAL 240

More on Order

DLN10C-AT1 DLN10C-AT1 ON Semiconductor DIODE GEN PURP 200V 1A AXIAL 197

More on Order

URL Link

DLN10C-BT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

980mV @ 1A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

35ns

Current - Reverse Leakage @ Vr

10µA @ 200V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

R-1, Axial

Supplier Device Package

-

Operating Temperature - Junction

150°C (Max)

DLN10C-AT1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

980mV @ 1A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

35ns

Current - Reverse Leakage @ Vr

10µA @ 200V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

R-1, Axial

Supplier Device Package

-

Operating Temperature - Junction

150°C (Max)