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DF200R12W1H3B27BOMA1 Datasheet

DF200R12W1H3B27BOMA1 Cover
DatasheetDF200R12W1H3B27BOMA1
File Size747 KB
Total Pages11
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts DF200R12W1H3B27BOMA1
Description IGBT MODULE VCES 1200V 200A

DF200R12W1H3B27BOMA1 - Infineon Technologies

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DF200R12W1H3B27BOMA1 DF200R12W1H3B27BOMA1 Infineon Technologies IGBT MODULE VCES 1200V 200A 434

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URL Link

DF200R12W1H3B27BOMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Configuration

2 Independent

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

30A

Power - Max

375W

Vce(on) (Max) @ Vge, Ic

1.3V @ 15V, 30A

Current - Collector Cutoff (Max)

1mA

Input Capacitance (Cies) @ Vce

2nF @ 25V

Input

Standard

NTC Thermistor

Yes

Operating Temperature

-40°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Module

Supplier Device Package

Module