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| Datasheet | DF200R12W1H3B27BOMA1 |
| File Size | 747 KB |
| Total Pages | 11 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DF200R12W1H3B27BOMA1 |
| Description | IGBT MODULE VCES 1200V 200A |
DF200R12W1H3B27BOMA1 - Infineon Technologies
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DF200R12W1H3B27BOMA1 | Infineon Technologies | IGBT MODULE VCES 1200V 200A | 434 More on Order |
URL Link
www.oemstron.com/datasheet/DF200R12W1H3B27BOMA1
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Manufacturer Infineon Technologies Series - IGBT Type - Configuration 2 Independent Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 30A Power - Max 375W Vce(on) (Max) @ Vge, Ic 1.3V @ 15V, 30A Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 2nF @ 25V Input Standard NTC Thermistor Yes Operating Temperature -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |